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| IXGF25N250 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT For Capacitor Discharge Applications | |||
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High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
IXGF25N250
VCES = 2500V
IC25 = 30A
VCE(sat) ⤠2.9V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1Mâ¦
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, VGE = 20V, 1ms
VGE= 20V, TVJ = 125°C, RG = 20â¦
Clamped Inductive Load
TC = 25°C
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 minute
Maximum Ratings
2500
V
2500
V
± 20
V
± 30
V
30
A
15
A
200
A
ICM = 240
A
0.5 ⢠VCES
114
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
20..120/4.5..27
Nm/lbin.
2500
V~
5
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250µA, VGE = 0V
VGE(th)
IC = 250µA, VCE = VGE
ICES
VCE = 0.8 ⢠VCES, VGE = 0V, Note 2
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 25A, VGE = 15V, Note 1
IC = 75A
Characteristic Values
Min. Typ. Max.
2500
V
3.0
5.0 V
50 µA
1 mA
±100 nA
2.9 V
5.2 V
ISOPLUS i4-PakTM
1
2
5
1 = Gate
2 = Emitter
ISOLATED TAB
5 = Collector
Features
UL Recognized Package
Electrically Isolated Tab
High Peak Current Capability
Low Saturation Voltage
MOS Gate Turn-On
- Drive Simplicity
Rugged NPT Structure
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Applications
Capacitor Discharge
Pulser Circuits
Advantages
High Power Density
Easy to Mount
© 2009 IXYS CORPORATION, All Rights Reserved
DS99829B(05/09)
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