IXGE200N60B_04 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
IXGE 200N60B
V_CES
I_C25
V_CE(sat)
t_fi
= 600 V
= 160 A
= 2.3 V
= 160ns
Symbol
Test Conditions
V_CES
T_J
V_CGR
T_J
V_GES
V_GEM
I_C25
I_L
I_C90
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
= 25°C to 150°C
= 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
Terminal Current Limit(RMS)
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 2.4 Ω
Clamped inductive load @ 0.8 V_CES
T_C = 25°C
50/60 Hz
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
E
Maximum Ratings
600
V
600
V
±20
V
±30
V
160
A
100
A
96
A
400
A
I_CM = 200
A
416
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
ISOPLUS 227^TM (IXGE)
G
Ec
Ec
C
G = Gate, E = Emitter, C = Collector
c either emitter terminal can be
used as Main or Kelvin Emitter
Features
•Conforms to SOT-227B outline
•Isolation voltage 3000 V~
•Very high current, fast switching IGBT
•Low V_CE(sat)
- for minimum on-state conduction
losses
•MOS Gate turn-on
- drive simplicity
•Low collector-to-case capacitance
(< 50 pF)
•Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 1 mA , V_GE = 0 V
I_C = 1 mA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 120A, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 25°C
T_J = 125°C
V
5.5
V
200 µA
2 mA
±400 nA
2.3
V
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
Advantages
•Easy to mount with 2 screws
•Space savings
•High power density
© 2004 IXYS All rights reserved
DS98911B(09/04)