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IXGB75N60BD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT with Diode
ADVANCE TECHNICAL INFORMATION
HiPerFASTTM
IGBT with Diode
IXGB 75N60BD1
VCES
IC25
VCE(sat)
tfi
= 600 V
= 120 A
= 2.3 V
= 150 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
IC25
TC = 25°C
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
PC
TC = 25°C
TJ
TJM
Tstg
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
120
A
75
A
300
A
ICM = 100
A
@ 0.8 VCES
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
10
g
300
°C
PLUS 264
G
CE
(TAB)
G = Gate C = Collector
E = Emitter Tab = Collector
Features
• High current handling capability in
holeless TO-264 package
• High frequency IGBT and antparallel
FRED in one package
• New generation HDMOSTM process
• MOS Gate turn-on fordrive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC = 1 mA, VGE = 0 V
IC = 500 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Note1
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
600
V
2.5
TJ = 125°C
5.5 V
650 µA
5 mA
±100 nA
2.3 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices on one
package
• Easy spring or clip mounting
© 2001 IXYS All rights reserved
98850 (8/01)