IXGB200N60B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 600V IGBT

GenX3^TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGB200N60B3
V_CES = 600V
I_C110 = 200A
V_CE(sat) ≤ 1.5V
t_fi(typ) = 183ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T_C = 110°C (chip capability)
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 1Ω
Clamped inductive load @ V_CE ≤ 600V
T_C = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting force
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
200
A
600
A
I_CM = 300
A
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
W
°C
°C
°C
°C
°C
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_CES
V_GE(th)
I_C = 250μA, V_GE = 0V
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
I_C = 200A
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
25 μA
5.0 mA
±100 nA
1.35
1.65
1.75
1.50 V
V
V
PLUS264^TM (IXGB)
G
C
E
(TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z _{NPT IGBT technology}
z _{Low switching losses}
z _{Low tail current}
z _{No latch up}
z _{Short circuit capability}
z _{Positive temperature coefficient}
for easy paralleling
z _{MOS input, voltage controlled}
z _{Optional ultra fast diode}
z _{International standard package}
Advantages
z _{Space savings}
z _{High power density power supplies}
z _{Low gate charge results in simple}
drive requirement
Applications
z _{High Frequency Inverters}
z _{UPS and Welding}
z _{AC and DC Motor Controls}
z _{Power Supplies and Drivers for}
Solenoids, Relays and Connectors
z _{PFC Circuits}
z _{Battery Chargers}
© 2008 IXYS CORPORATION, All rights reserved
DS99929A(05/08)