IXGA7N60BD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

Advanced Technical Information
HiPerFAST^TM IGBT
with Diode
IXGA 7N60BD1
IXGP 7N60BD1
V_CES
I_C25
V_CE(sat)
t_fi
= 600 V
= 14 A
= 2.0 V
= 150ns
Symbol
Test Conditions
V
CES
V_CGR
T = 25°C to 150°C
J
T_J = 25°C to 150°C; R_GE = 1 MΩ
V_GES
V
GEM
Continuous
Transient
I_C25
I_C90
I_CM
SSOA
(RBSOA)
P_C
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V
GE
=
15
V,
T
VJ
=
125°C,
R
G
=
18
Ω
Clamped inductive load @ 0.8 V_CES
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Mounting torque, (TO-220)
M3
M3.5
Weight
TO-220
TO-263
Maximum Ratings
600
V
600
V
±20
V
±30
V
14
A
7
A
56
A
I = 14
A
CM
80
W
-55 ... +150 °C
150 °C
-55 ... +150 °C
300
°C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4g
2g
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V
CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_GE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
T = 25°C
J
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I = I , V = 15 V
C
C90 GE
600
V
2.5
5.5 V
100 µA
750 µA
±100 nA
1.8 2.0 V
TO-220AB (IXGP)
GCE
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
• High current handling capability
• HiPerFAST^TM HDMOS^TM process
• MOS Gate turn-on
- drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Suitable for surface mounting
© 2002 IXYS All rights reserved
DS98977(12/02)