IXGA50N60C4 Datasheet, PDF (1/6 Pages) IXYS Corporation – High-Gain IGBTs

High-Gain IGBTs
IXGA50N60C4
IXGP50N60C4
IXGH50N60C4
V_CES =
I_C110 =
V ≤ _CE(sat)
600V
36A
2.50V
High-Speed PT Trench IGBT
TO-263 AA (IXGA)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±20
V
±30
V
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
90
A
36
A
220
A
I_CM = 72
A
≤ V_CE V_CES
290
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
N/lb.
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 36A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
4.0
6.5 V
25 μA
1 mA
±100 nA
1.95 2.50 V
1.65
V
© 2011 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-220AB (IXGP)
GC _E
TO-247 (IXGH)
C (Tab)
G
CE
C (Tab)
G = Gate
D = Collector
S = Emitter Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{International Standard Packages}
z _{Square RBSOA}
Advantages
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Lamp Ballasts}
DS100298B(04/11)