IXGA48N60C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 600V IGBT

GenX3^TM 600V IGBT
High Speed PT IGBTs for
40-100kHz switching
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C ( Limited by Leads)
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load @ ≤ 600V
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-247&TO-220)
TO-247
TO-220
TO-263
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
75
A
48
A
250
A
30
A
300
mJ
I_CM = 100
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
3.0
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
25 μA
250 μA
±100 nA
2.3 2.5 V
1.8
V
© 2009 IXYS CORPORATION, All rights reserved
V_CES =
I_C110 =
V_CE(sat) ≤
t_fi(typ) =
600V
48A
2.5V
38ns
TO-263 (IXGA)
G
E
TO-247 (IXGH)
(TAB)
G
C
E
TO-220 (IXGP)
(TAB)
GCE
(TAB)
G = Gate
E = Emitter
Features
C = Collector
TAB = Collector
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Avalanche Rated}
z _{Fast Switching}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
DS99953A(01/09)