IXGA30N120B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 1200V IGBTs

GenX3^TM 1200V
IGBTs
High-Speed Low-Vsat PT
IGBTs 3-20 kHz Switching
IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
TO-263 (IXGA)
Symbol Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped Inductive Load
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
1200
V
1200
V
± 20
V
± 30
V
60
A
30
A
150
A
I_CM = 60
A
V_CE ≤ V_CES
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
100 μA
1 mA
±100 nA
2.96
2.95
3.5 V
V
G
E
C (Tab)
TO-220 (IXGP)
GCE
TO-247 (IXGH)
C (Tab)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Square RBSOA}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Welding Machines}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99730B(10/09)