IXGA20N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFASTTM IGBT

HiPerFAST^TM IGBT
IXGA 20N60B
IXGP 20N60B
V_CES
I_C25
V_CE(sat)typ
t_fi
= 600 V
= 40 A
= 1.7 V
= 100 ns
Preliminary data sheet
Symbol
Test Conditions
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
V_GES
V
GEM
Continuous
Transient
I
C25
I_C90
I
CM
SSOA
(RBSOA)
T = 25°C
C
T_C = 90°C
T = 25°C, 1 ms
C
V_GE = 15 V, T_VJ = 125°C, R_G = 22 W
Clamped inductive load, L = 100 mH
P_C
T_C = 25°C
T_J
T
JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Mounting torque (TO-220)
Weight
TO-220
TO-263
Maximum Ratings
600
V
600
V
±20
V
±30
V
40
A
20
A
80
A
I_CM = 40
A
@ 0.8 V_CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
M3 0.45/4 Nm/lb.in.
M3.5 0.55/5 Nm/lb.in.
4
g
2
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 mA, V_GE = 0 V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
600
V
2.5
5V
200 mA
1 mA
±100 nA
1.7
2.0 V
TO-220AB (IXGP)
GCE
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
· International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
· High frequency IGBT
· High current handling capability
· HiPerFAST^TM HDMOS^TM process
· MOS Gate turn-on
- drive simplicity
Applications
· Uninterruptible power supplies (UPS)
· Switched-mode and resonant-mode
power supplies
· AC motor speed control
· DC servo and robot drives
· DC choppers
Advantages
· High power density
· Suitable for surface mounting
· Very low switching losses for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98506B (07/99)
1-4