IXGA20N120A3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 1200V IGBTs

GenX3^TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
V_CES =
I_C110 =
V_CE(sat) ≤
1200V
20A
2.5V
TO-263 AA (IXGA)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
F_C
T_L
T_SOLD
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_J = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
40
A
20
A
120
A
I_CM = 40
A
@V_CE ≤ 960
V
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting Torque (TO-247 & TO-220)
Mounting Force (TO-263)
1.13/10 Nm/lb.in.
10..65 / 2.2..14.6
N/lb.
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
°C
260
°C
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 20A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
2.5
5.0 V
25 μA
1 mA
±100 nA
2.3 2.5 V
2.5
V
G
E
C (Tab)
TO-220AB (IXGP)
GC _E
TO-247 (IXGH)
C (Tab)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100046A(11/09)