IXGA16N60C2D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – HiPerFAST IGBTs C2-Class High Speed w/ Diode

HiPerFAST^TM IGBTs
C2-Class High Speed
w/ Diode
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
V_CES =
I_C110 =
V_CE(sat) ≤
t_fi(typ) =
600V
16A
3.0V
33ns
TO-263 AA (IXGA)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
F_C
T_L
T_SOLD
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_J = 125°C, R_G = 22Ω
Clamped Inductive load
T_C = 25°C
600
V
600
V
±20
V
±30
V
40
A
16
A
11
A
100
A
I_CM = 32
A
V_CE ≤ V_CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting Torque (TO-220 & TO-247)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
°C
260
°C
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 12A, V_GE = 15V, Note1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.5 V
25 μA
1 mA
±100 nA
3.0 V
1.8
V
G
E
C (Tab)
TO-220AB (IXGP)
GC _E
TO-247 (IXGH)
C (Tab)
G
DC
SE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2010 IXYS CORPORATION, All Rights Reserved
DS99179B(08/10)