IXGA16N60C2 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFASTTM IGBT C2-Class High Speed IGBT

HiPerFAST^TM IGBT
C2-Class High Speed
IGBT
Advance Technical Information
IXGA 16N60C2
IXGP 16N60C2
IXGA 16N60C2D1
IXGP 16N60C2D1
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 600 V
= 40 A
= 3.0 V
= 35 ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_D110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
Weight
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C (IXG_16N60C2D1 diode)
T_C = 25°C, 1 ms
V_GE = 15 V, T_J = 125°C, R_G = 22 Ω
Clamped inductive load
T_C = 25°C
Mounting torque (M3.5 screw)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
TO-220
TO-263
D1
Maximum Ratings
600
V
600
V
±20
V
±30
V
40
A
16
A
11
A
100
A
I_CM = 32
A
@0.8 V_CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.55/5 Nm/lb.in.
300
°C
260
°C
4
g
2
g
Test Conditions
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 12 A_, V_GE = 15 V
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
2.5
16N60C2
16N60C2D1
5.0 V
25 µA
50 µA
T_J=125°C
±100 nA
3.0 V
2.1
V
TO-263 (IXGA)
G
C
TO-220 (IXGP)
C (TAB)
GC _E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Very high frequency IGBT}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{PFC circuits}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2004 IXYS All rights reserved
DS99142A(3/04)