IXGA12N60B Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
Preliminary data sheet
IXGA 12N60B
IXGP 12N60B
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 600 V
= 24 A
= 2.1 V
= 120 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 300 µH
P_C
T_C = 25°C
T_J
T
JM
T_stg
M_d
Mounting torque with screw M3
Mounting torque with screw M3.5
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Maximum Ratings
600
V
600
V
±20
V
±30
V
24
A
12
A
48
A
I_CM = 24
A
@ 0.8 V_CES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
300
°C
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_GE = 0 V
I_C = 250 µA, V_GE = V_GE
V_CE = 0.8 V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_CE90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 25°C
T_J = 125°C
V
5.0 V
100 µA
1 mA
±100 nA
2.1 V
TO-220 AB (IXGP)
G
E
TO-263 AA (IXGA)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l _{Moderate frequency IGBT and anti-}
parallel FRED in one package
l _{New generation HDMOS}TM _process
l _{International standard package}
JEDEC TO-220AB and TO-263AA
l _{High peak current handling capability}
Applications
l _{PFC circuit}
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{Switch-mode and resonant-mode}
power supplies
© 2002 IXYS All rights reserved
98909 (2/02)