IXGA12N120A3 Datasheet, PDF (1/5 Pages) IXYS Corporation – GenX3 1200V IGBTs

GenX3^TM 1200V
IGBTs
High Surge Current
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
IXGA12N120A3
IXGP12N120A3
IXGH12N120A3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
22
12
60
I_CM = 24
≤ V_CE 0.8 • V_CES
100
-55 ... +150
150
-55 ... +150
Maximum Lead Temperature for Soldering
300
1.6 mm (0.062in.) from Case for 10s
260
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
TO-263
2.5
TO-220
3.0
TO-247
6.0
A
A
A
A
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C90, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
2.5
5.0 V
10 μA
275 μA
±100 nA
2.40
2.75
3.0 V
V
V_CES =
I_C90
=
V ≤ _CE(sat)
1200V
12A
3.0V
TO-263 AA (IXGA)
G
S
D (Tab)
TO-220AB (IXGP)
GD _S
TO-247 (IXGH)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{Optimized for Low Conduction Losses}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100212B(11/10)