IXFZ520N075T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 GigaMOS HiperFET Power MOSFET

Advance Technical Information
TrenchT2^TM GigaMOS^TM
HiperFET^TM
Power MOSFET
IXFZ520N075T2
V_DSS =
I_D25 =
R_DS(on) ≤
75V
465A
1.3mΩ
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
V_ISOL
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
75
V
75
V
±20
V
±30
V
465
A
1560
A
200
A
3
J
600
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
2500
V~
3000
V~
300
°C
260
°C
2500
V~
20..120 / 4.5..27
3
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 100A, Note 1
Characteristic Values
Min.
Typ. Max.
75
V
2.0
4.0 V
±200 nA
10 μA
1.5 mA
1.3 mΩ
DE475
D
D
D
G
S
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Substrate}
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)
z _{175°C Operating Temperature}
z _{Very High Current Handling}
Capability
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Very Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters and Off-Line UPS}
z _{Primary-Side Switch}
z _{High Speed Power Switching}
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100250(03/10)