IXFY4N60P3 Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar3 TM HiPerFETTM Power MOSFETs

Preliminary Technical Information
Polar3 ^TM HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFY4N60P3
IXFA4N60P3
IXFP4N60P3
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25C to 150C
T_J = 25C to 150C, R_GS = 1M
Continuous
Transient
T_C = 25C
T_C = 25C, Pulse Width Limited by T_JM
T_C = 25C
T_C = 25C
I_S  I_DM, V_DD  V_DSS, T_J  150C
T_C = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
600
V
600
V
30
V
40
V
4
A
8
A
2
A
200
mJ
35
V/ns
114
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
0.35
2.50
3.00
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
100 nA
10 A
100 μA
2.2 
V_DSS =
I_D25 =
 R_DS(on)
600V
4A
2.2
TO-252 (IXFY)
G
S
TO-263 (IXFA)
D (Tab)
G
S
D (Tab)
TO-220 (IXFP)
GD _S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
 _{International Standard Packages}
 _{Fast Intrinsic Rectifier}
 _{Avalanche Rated}
 _{Low RDS(ON) and QG}
 _{Low Package Inductance}
Advantages
 _{High Power Density}
 _{Easy to Mount}
 _{Space Savings}
Applications
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{DC-DC Converters}
 _{Laser Drivers}
 _{AC and DC Motor Drives}
 _{Robotics and Servo Controls}
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DS100427A(11/13)