IXFX64N50Q3 Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode

Advance Technical Information
HiperFET^TM
Power MOSFETs
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFK64N50Q3
IXFX64N50Q3
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
500V
64A
85mΩ
250ns
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
500
V
500
V
±30
V
±40
V
64
A
160
A
64
A
4
J
50
V/ns
1000
W
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.5
6.5 V
±200 nA
50 μA
2 mA
85 mΩ
G
D
S
Tab
PLUS247 (IXFX)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{Low Intrinsic Gate Resistance}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on) and QG}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2011 IXYS CORPORATION, All Rights Reserved
DS100346(06/11)