IXFX32N80Q3 Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode

HiperFET^TM
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFK32N80Q3
IXFX32N80Q3
V_DSS =
I_D25 =
 R_DS(on)
t_rr

800V
32A
270m
300ns
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25C to 150C
T_J = 25C to 150C, R_GS = 1M
Continuous
Transient
Maximum Ratings
800
V
800
V
30
V
40
V
T_C = 25C
T_C = 25C, Pulse Width Limited by T_JM
T_C = 25C
T_C = 25C
I_S  I_DM, V_DD  V_DSS, T_J  150C
T_C = 25C
32
80
32
3
50
1000
-55 ... +150
150
-55 ... +150
A
A
A
J
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = 30V, V_DS = 0V
I_DSS
V_DS = 0.8 • V_DSS, V_GS = 0V
T_J = 125C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
6.0 V
200 nA
50 A
2 mA
270 m
G
D
S
Tab
PLUS247 (IXFX)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
 _{Low Intrinsic Gate Resistance}
 _{Low Package Inductance}
 _{Fast Intrinsic Rectifier}
 _{Low RDS(on) and QG}
Advantages
 _{High Power Density}
 _{Easy to Mount}
 _{Space Savings}
Applications
 _{DC-DC Converters}
 _{Battery Chargers}
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{DC Choppers}
 _{Temperature and Lighting Controls}
© 2014 IXYS CORPORATION, All Rights Reserved
DS100361B(01/14)