IXFX32N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFET

HiPerFET^TM Power MOSFET
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
Preliminary data sheet
IXFX 32N50
V_DSS =
I_D25 =
= R_DS(on)
500 V
32 A
0.15 W
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E_AS
E_AR
dv/dt
P_D
T_J
T
JM
T_stg
T_L
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500
V
500
V
±20
V
±30
V
32
A
120
A
32
A
1.5
J
45
mJ
5 V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
V_GS= 0 V, I_D = 1 mA
V_DSS temperature coefficient
V_DS= V_GS, I_D = 4 mA
V_GS(th) temperature coefficient
V_GS= ±20 V_DC, V_DS = 0
V_DS= 0.8 • V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
V_GS = 10 V, I_D = 15A
Pulse test, t £ 300 ms, duty cycle d £ 2 %
500
V
0.102
%/K
2
-0.206
4V
%/K
±100 nA
200 mA
1 mA
0.15 W
PLUS 247
G = Gate
S = Source
D = Drain
Features
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98719A (7/00)
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