IXFX120N20 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXFX 120N20
IXFK 120N20
V_DSS =
I_D25 =
= R_DS(on)
200 V
120 A
17 mW
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D104
I_DM
I
AR
E_AR
E
AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
T_C = 104°C (External lead capability)
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
200
V
200
V
±20
V
±30
V
120
A
76
A
480
A
120
A
64
mJ
3
J
5 V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247^TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Symbol
V_DSS
V
GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3mA
V = V , I = 8mA
DS
GS D
V
GS
=
±20
V,
V
DS
=
0
V_DS = V_DSS
V =0V
GS
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
200
V
2.0
4.0 V
±200 nA
T_J = 25°C
T
J
= 125°C
100 mA
2 mA
17 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247^TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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