IXFV110N25T Datasheet, PDF (1/5 Pages) IXYS Corporation – Trench Gate Power HiperFET

Preliminary Technical Information
Trench Gate
Power HiperFET
N-Channel Enhancement Mode
Avalanche Rated
IXFV110N25T
IXFV110N25TS
V_DSS =
I_D25 =
R_DS(on) ≤
250V
110A
24mΩ
Symbol
V
DSS
V_DGR
V
GSS
V_GSM
I_D25
I
LRMS
I_DM
I_A
E
AS
dV/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T = 25°C to 150°C
J
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T = 25°C
C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T = 25°C
C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting force
Maximum Ratings
250
V
250
V
± 20
V
± 30
V
110
A
75
A
300
A
25
A
1
J
10
694
-55 ... +150
150
-55 ... +150
300
260
11..65 / 2.5..14.6
4
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V
GS(th)
V = V , I = 3mA
DS
GS D
I
V = ± 20V, V = 0V
GSS
GS
DS
I
DSS
V =V
DS
DSS
V = 0V
GS
T = 125°C
J
R
DS(on)
V
GS
=
10V,
I
D
=
0.5
•
I,
D25
Notes
1,
2
Characteristic Values
Min. Typ. Max.
250
V
2.5
4.5 V
± 200 nA
10 μA
1 mA
24 mΩ
PLUS220 (IXFV)
G
D
S
(TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Avalanche rated}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor drives}
z _{Uninterruptible power supplies}
© 2008 IXYS CORPORATION, All rights reserved
DS100031(08/08)