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| IXFT80N65X2HV Datasheet, PDF (1/6 Pages) IXYS Corporation – X2-Class HiPerFETTM | |||
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X2-Class HiPerFETTM
Power MOSFET
IXFT80N65X2HV
VDSS =
ID25 =
ï£ RDS(on)
650V
80A
38mï
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-268HV (IXFT)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGS = 1Mï
Continuous
Transient
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 150°C
TC = 25ï°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
650
V
650
V
ï±30
V
ï±40
V
80
A
160
A
20
A
3
J
50
V/ns
890
W
-55 ... +150
ï°C
150
ï°C
-55 ... +150
ï°C
300
°C
260
°C
4
g
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
ï¬ High Voltage Package
ï¬ Low R and Q
DS(ON)
G
ï¬ Avalanche Rated
ï¬ Low Package Inductance
Advantages
ï¬ High Power Density
ï¬ Easy to Mount
ï¬ Space Savings
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ï±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125ï°C
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
© 2016 IXYS CORPORATION, All Rights Reserved
Characteristic Values
Min. Typ. Max.
650
V
3.5
5.0 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
50 ïA
3 mA
38 mï
Applications
ï¬ Switch-Mode and Resonant-Mode
Power Supplies
ï¬ DC-DC Converters
ï¬ PFC Circuits
ï¬ AC and DC Motor Drives
ï¬ Robotics and Servo Controls
DS100694A(03/16)
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