IXFT6N100F Datasheet, PDF (1/4 Pages) IXYS Corporation – Power MOSFETs

Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
High dV/dt, Low t_rr
Low
Q_g,
Low
Intrinsic
R_g
IXFH 6N100F
IXFT 6N100F
V_DSS
I_D25
R_DS(on)
= 1000 V
= 6A
= 1.9 Ω
t
rr
≤
250
ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
TO-247 AD (IXFH)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-247
TO-247
TO-268
Maximum Ratings
1000
1000
±20
±30
6
24
6
20
500
15
V
V
V
V
A
A
A
mJ
mJ
V/ns
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
V_GS = 0 V, I_D = 500uA
V_DS = V_GS, I_D = 2.5 mA
V_GS = ±20 V, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J
=
25°C,
unless otherwise specified)
min. typ. max.
1000
V
3.0
5.5 V
±100 nA
T_J = 125°C
50 µA
1 mA
1.9 Ω
(TAB)
TO-268 (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
● _{RF capable MOSFETs}
● _{Double metal process for low gate}
resistance
● _{Rugged polysilicon gate cell structure}
● _{Unclamped Inductive Switching (UIS)}
rated
● _{Low package inductance}
- easy to drive and to protect
● _{Fast intrinsic rectifier}
Applications
● _{DC-DC converters}
● _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
● _{DC choppers}
● _{13.5 MHz industrial applications}
● _{Pulse generation}
● _{Laser drivers}
● _{RF amplifiers}
Advantages
● _{Space savings}
● _{High power density}
© 2002 IXYS All rights reserved
98732B (9/02)