IXFT50N85XHV Datasheet, PDF (1/6 Pages) IXYS Corporation – X-Class HiPerFETTM

X-Class HiPerFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFT50N85XHV
IXFH50N85X
IXFK50N85X
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25C to 150C
T_J = 25C to 150C, R_GS = 1M
Continuous
Transient
T_C = 25C
T_C = 25C, Pulse Width Limited by T_JM
T_C = 25C
T_C = 25C
I_S  I_DM, V_DD  V_DSS, T_J  150°C
T_C = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-264P)
TO-268HV
TO-247
TO-264P
Maximum Ratings
850
V
850
V
30
V
40
V
50
A
125
A
25
A
2
J
50
V/ns
890
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
4
g
6
g
10
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
100 nA
50 A
3 mA
105 m
V_DSS =
I_D25 =
 R_DS(on)
850V
50A
105m
TO-268HV (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
G
D
S
TO-264P (IXFK)
D (Tab)
G
D
S
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
Features
 _{International Standard Packages}
 _{High Voltage Package}
 _{Low RDS(ON) and QG}
 _{Avalanche Rated}
 _{Low Package Inductance}
Advantages
 _{High Power Density}
 _{Easy to Mount}
 _{Space Savings}
Applications
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{DC-DC Converters}
 _{PFC Circuits}
 _{AC and DC Motor Drives}
 _{Robotics and Servo Controls}
© 2016 IXYS CORPORATION, All Rights Reserved
DS100704C(6/16)