IXFT18N100Q3 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiperFETTM Power MOSFETs Q3-Class

HiperFET^TM
Power MOSFETs
Q3-Class
Advance Technical Information
IXFT18N100Q3
IXFH18N100Q3
V_DSS =
I_D25 =
R_DS(on) ≤
1000V
18A
660mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
18
A
60
A
18
A
1.5
J
50
V/ns
830
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
4.0
6.0
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.5 V
±100 nA
25 μA
1.25 mA
660 mΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{Low Intrinsic Gate Resistance}
z _{International Standard Packages}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on) and QG}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2011 IXYS CORPORATION, All Rights Reserved
DS100390(10/11)