IXFT10N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
IXFT 10 N100
IXFT12 N100
V_DSS
1000 V
1000 V
I_D25
10 A
12 A
R_DS(on)
1.20 Ω
1.05 Ω
t_rr ≤ 250 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings TO-268 Case Style
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
10N100
12N100
10N100
12N100
10N100
12N100
1000
1000
±20
±30
10
12
40
48
10
12
V
V
V
G
V
S
A
A
A
G = Gate,
A _{S = Source,}
A
A
TAB = Drain
(TAB)
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
30
mJ
5 V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-268 = 6 g
Features
z _{International standard package}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell}
structure
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic Rectifier}
Applications
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 4 mA
1000
2.0
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
10N100
12N100
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
250 µA
1 mA
1.20 Ω
1.05 Ω
z _{DC-DC converters}
z _{Synchronous rectification}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Temperature and lighting controls}
z _{Low voltage relays}
Advantages
z _{Surface mountable, high power}
package
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS98509A(01/04)