IXFR90N30 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247

HiPerFET^TMPower MOSFETs IXFR 90N30
ISOPLUS247^TM
(Electrically Isolated Back Surface)
Single MOSFET Die
V = 300 V
DSS
I_D25 = 75 A
R_DS(on) = 33 mW
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
V
ISOL
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
300
V
300
V
±20
V
±30
V
75
A
360
A
90
A
64
mJ
3
J
5 V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 250mA
V_DS = V_GS, I_D = 4mA
V
GS
=
±20
V,
V
DS
=
0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 2, 3
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
300
2.0
T_J = 25°C
T_J = 125°C
V
4.5 V
±100 nA
100 mA
2 mA
33 mW
ISOPLUS 247^TM
E153432
G = Gate
S = Source
Isolated backside*
D = Drain
* Patent pending
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<30pF)}
l _{Low R}
HDMOS^TM process
DS (on)
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC & DC motor control}
Advantages
l _{Easy assembly}
l _{Space savings}
l _{High power density}
l _{Low noise to ground}
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98764 (11/00)