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| IXFR80N60P3 Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar3TM HiPerFETTM Power MOSFET | |||
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Polar3TM HiPerFETTM
Power MOSFET
IXFR80N60P3
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
VDSS =
ID25 =
ï£ RDS(on)
trr
ï£
600V
48A
85mï
250ns
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGS = 1Mï
Continuous
Transient
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 150ï°C
TC = 25ï°C
Maximum Ratings
600
V
600
V
ï±30
V
ï±40
V
48
A
200
A
40
A
2
J
35
540
-55 ... +150
150
-55 ... +150
V/ns
W
ï°C
ï°C
ï°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
50/60 Hz, 1 Minute
2500 ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï Vï¾
Mounting Force
20..120/4.5..27
N/lb
5
g
Symbol
Test Conditions
(TJ = 25ï°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ï±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125ï°C
RDS(on)
VGS = 10V, ID = 40A, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±200 nA
50 ïA
4 mA
85 mï
© 2014 IXYS CORPORATION, All Rights Reserved
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
ï¬ Silicon Chip on Direct-Copper Bond
(DCB) Substrate
ï¬ Isolated Mounting Surface
ï¬ Low Intrinsic Gate Resistance
ï¬ 2500V~ Electrical Isolation
ï¬ Dynamic dv/dt Rating
ï¬ Avalanche Rated
ï¬ Fast Intrinsic Rectifier
ï¬ Low QG
ï¬ Low RDS(on)
ï¬ Low Drain-to-Tab Capacitance
ï¬ Low Package Inductance
Advantages
ï¬ High Power Density
ï¬ Easy to Mount
ï¬ Space Savings
Applications
ï¬ DC-DC Converters
ï¬ Battery Chargers
ï¬ Switch-Mode and Resonant-Mode
Power Supplies
ï¬ Uninterrupted Power Supplies
ï¬ AC Motor Drives
ï¬ High Speed Power Switching
Applications
DS100357B(04/14)
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