IXFR80N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS247

PolarHV^TM HiPerFET _{IXFR 80N50P}
Power MOSFET
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
500
45
72
200
V
A
mΩ
ns
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GSM
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
F_C
V_ISOL
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Transient
Continuous
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T
C
= 25° C
Maximum lead temperature for soldering
500
500
± 40
± 30
45
200
80
80
3.5
20
360
-55 ... +150
150
-55 ... +150
300
Mounting force
50/60 Hz, RMS, 1 minute
20..120/4.5..25
2500
5
V _{ISOPLUS247 (IXFR)}
V
E153432
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
N/lb
V~
g
G
D
S
(Isolated Tab)
G = Gate
S = Source
D = Drain
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<30pF)}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Rated for Unclamped Inductive Load}
Switching (UIS)
l _{Fast intrinsic Rectifier}
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 500 µA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ± 30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 40 A
T_J = 125° C
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
± 200 nA
25 µA
2 mA
72 mΩ
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99438E(03/06)