IXFR80N20Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247, Q-Class

HiPerFET^TM Power MOSFETs
ISOPLUS247^TM, Q-Class
IXFR 80N20Q
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Low Q_g, High dv/dt
Preliminary data
V_DSS = 200 V
I_D25 = 71 A
= R_DS(on) 28mW
t_rr £ 200 ns
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings
200
V
200
V
±20
V
±30
V
71
A
320
A
80
A
45
mJ
1.5
J
5
V/ns
310
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
5
g
Test Conditions
V_GS = 0 V, I_D = 250 uA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V =0V
GS
V_GS = 10 V, I_D = I_T
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
200
V
2.0
4.0 V
±100 nA
T_J = 25°C
T
J
=
125°C
25 mA
1 mA
28 mW
ISOPLUS 247^TM
E153432
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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