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| IXFR66N50Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q2-Class | |||
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HiPerFETTM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
IXFR66N50Q2
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
50
A
264
A
66
A
4
J
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
20
500
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
2500
V~
Mounting force
20..120/4.5..27
N/lb.
5
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 33A, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
± 200 nA
50 μA
2 mA
85 mΩ
VDSS =
ID25 =
⤠RDS(on)
trr
â¤
500V
50A
85mΩ
250ns
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
⢠Double metal process for low gate
resistance
⢠International standard package
⢠Epoxy meet UL 94 V-0, flammability
classification
⢠Avalanche energy and current rated
⢠Fast intrinsic Rectifier
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99076A(05/08)
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