IXFR64N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET IXFR 64N60P
Power MOSFET
(Electrically Isolated Back Surface)
V_DSS =
I_D25
=
≤ R_DS(on)
t_rr
≤
600 V
36 A
105 m Ω
200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
ISOPLUS247 (IXFR)
Maximum Ratings
E153432
V_DSS
V_DGR
V_GSS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V
ISOL
T_L
F_C
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
50/60 Hz, RMS, 1 minute
1.6 mm (0.062 in.) from case for 10 s
Mounting force
ISOPLUS247
600
600
± 30
± 40
36
150
64
80
3.5
20
360
-55 ... +150
150
-55 ... +150
2500
300
22..130/5..29
5
V
V
V
V
Isolated back surface
A
A
G = Gate D = Drain
S = Source
A
mJ
J
V/ns
W
°C
°C
°C
V~
°C
N/lb
g
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V_GS(th)
V_DS = V_GS, I_D = 8 mA
I_GSS
V_GS = ± 30 V_DC, V_DS = 0
I
DSS
V =V
DS
DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T , Note 1
T_J = 125° C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
± 200 nA
25 µA
1000 µA
105 m Ω
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99441E(01/06)