IXFR64N50P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
IXFR64N50P
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
500
V
500
V
±30
V
±40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
37
A
150
A
64
A
2.5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
20
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
300
Plastic Body for 10s
260
50/60 Hz, RMS
t = 1min
2500
I_ISOL ≤ 1mA
t = 1s
3000
Mounting Force
20..120 / 4.5..27
°C
°C
V~
V~
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
R_DS(on)
V_GS = 10V, I_D = 32A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
±200 nA
25 μA
1 mA
95 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
500V
37A
95mΩ
200ns
ISOPLUS247
E153432
Isolated Tab
G = Gate
D = Drain
S = Source
Features
International Standard Package
Fast Intrinsic Rectifier
Avalanche Rated
Low R_DS(ON) and Q_G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS99412F(5/09)