IXFR58N20Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET^TM Power MOSFETs ^{IXFR 58N20Q}
ISOPLUS247^TM Q-Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary Data Sheet
V=
DSS
I_D25 =
R_DS(on) =
200 V
50 A
40 mΩ
t_rr ≤ 200 ns
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I
D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
V
ISOL
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, Note 1
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
200
V
200
V
±20
V
±30
V
50
A
232
A
58
A
30
mJ
1.0
J
5 V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
250
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 4mA
V
GS
=
±20
V,
V
DS
=
0
V_DS = V_DSS
V =0V
GS
V_GS = 10 V, I_D = 29A
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
200
V
2.0
4.0 V
±100 nA
T_J = 25°C
T
J
= 125°C
25 µA
1 mA
40 mΩ
ISOPLUS 247^TM
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<50pF)}
z _{IXYS advanced low Qg process}
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic diode}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98591B(01/03)