IXFR55N50F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRF^TM
Power MOSFETs
F-Class: MegaHertz Switching
IXFR 55N50F
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
V_DSS = 500 V
I_D25 =
R_DS(on) =
55 A
90 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
TT_CC
= 25°C
= 25°C
IT_SJ
≤
≤
1I^D5^M0, °^{dCi/,dRt ≤}_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
500
V
500
V
±20
V
±30
V
45
A
220
A
55
A
60
mJ
3.0
J
10 V/ns
400
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 2, 3
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
3.0
5.5 V
±200 nA
T_J = 25°C
T_J = 125°C
100 µA
3 mA
90 mΩ
ISOPLUS 247^TM
E153432
Isolated backside*
G = Gate D = Drain
S = Source TAB = Electrically Isolated
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{RF capable Mosfets}
z _{Low gate charge and capacitances}
- easier to drive
-faster switching
z _{Low drain to tab capacitance(<30pF)}
z _{Low RDS (on) HDMOSTM process}
z _{Rugged polysilicon gate cell structure}
z _{Rated for Unclamped Inductive Load}
Switching (UIS)
z _{FastintrinsicRectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS98814C(06/04)