IXFR50N50 Datasheet, PDF (1/3 Pages) IXYS Corporation – HiPerFET-TM Power MOSFETs ISOPLUS247-TM

HiPerFET^TM Power MOSFETs
ISOPLUS247^TM
(Electrically Isolated Back Surface)
Single Die MOSFET
IXFR 50N50
IXFR 55N50
V_DSS
I_D25
500 V 43 A
500 V 48 A
t_rr ≤ 250 ns
R_DS(on)
100 mΩ
90 mΩ
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
500
500
±20
±30
50N50
43
55N50
48
50N50
200
55N50
220
50N50
50
55N50
55
60
3
5
400
-40 ... +150
150
-40 ... +150
300
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
2.5
4.5 V
±200 nA
T_J = 25°C
T_J = 125°C
50N50
55N50
25 µA
2 mA
100 mΩ
90 mΩ
ISOPLUS 247^TM
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<50pF)}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly}
l _{Space savings}
l _{High power density}
© 2002 IXYS All rights reserved
98588B (04/02)