IXFR44N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 44N80P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
800
25
190
250
V
A
mΩ
ns
Symbol
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T
SOLD
V_ISOL
F
C
Weight
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
25
A
100
A
25
A
80
mJ
3.4
J
10
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
V~
20..120 /4.5..25
N/lb
5
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 800 μA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ± 30 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T, Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.0 V
± 200 nA
T_J = 125°C
50 μA
1.5 mA
200 mΩ
© 2006 IXYS All rights reserved
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
DS99504E(06/06)