IXFR44N50Q3 Datasheet, PDF (1/5 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
HiperFET^TM
Power MOSFET
Q3-Class
(Electrically Isolated Tab)
IXFR44N50Q3
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
500V
25A
154mΩ
250ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
500
V
500
V
±30
V
±40
V
25
A
130
A
44
A
1.5
J
50
300
-55 ... +150
150
-55 ... +150
300
260
2500
V/ns
W
°C
°C
°C
°C
°C
V∼
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 22A, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.5
6.5 V
±100 nA
25 μA
1 mA
154 mΩ
ISOPLUS247
E153432
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{Low Intrinsic Gate Resistance}
z _{2500V~ Electrical Isolation}
z _{Fast Intrinsic Rectifier}
z _{Avalanche Rated}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100382A(05/12)