IXFR44N50Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET^TM
Power MOSFETs
ISOPLUS247^TM, Q-Class
IXFR 44N50Q
IXFR 48N50Q
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
V_DSS
500 V
500 V
I_D25
34 A
40 A
R_DS(on)
120 mΩ
110 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
500
500
±20
±30
44N50Q 34
48N50Q 40
44N50Q 176
48N50Q 192
44N50Q 44
48N50Q 48
60
2.5
5
310
-55 ... +150
150
-55 ... +150
300
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
g
Test Conditions
V_GS = 0 V, I_D = 250µA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 2, 3
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
2.0
T_J = 125°C
44N50Q
48N50Q
V
4.0 V
±100 nA
100 µA
2 mA
120 mΩ
110 mΩ
ISOPLUS 247^TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<30pF)}
l _{IXYS advanced low Qg process}
l _{Rugged polysilicon gate cell structure}
l _{Rated for Unclamped Inductive Load}
Switching (UIS)
l _{Fast intrinsic diode}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly}
l _{Space savings}
l _{High power density}
© 2002 IXYS All rights reserved
98702B (6/02)