IXFR44N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS247

PolarHV^TM HiPerFET ^{IXFR 44N50P}
Power MOSFET
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
500
24
150
200
V
A
mΩ
ns
Symbol
V_DSS
V_DGR
V_GSM
V_GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T
L
V
ISOL
F_C
Weight
Test Conditions
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Transient
Continuous
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 10 Ω
T
C
= 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting Force
ISOPLUS247 (IXFR)
Maximum Ratings
E153432
500
V
500
V
±40
V
±30
V
G
D
S
ISOLATED TAB
24
A
132
A _{G = Gate}
D = Drain
44
A ^{S = Source}
55
mJ
1.7
J
10
V/ns _Features
208
-55 ... +150
150
-55 ... +150
300
2500
20..120 / 4.5..25
5
l _{International standard isolated}
W _package
°C ^{l UL recognized package}
°C ^l _{Silicon chip on Direct-Copper-Bond}
°C _substrate
- High power dissipation
°C _{- Isolated mounting surface}
- 2500V electrical isolation
V~ l _{Unclamped Inductive Switching (UIS)}
N/lb ^rated
l _{Low package inductance}
g - easy to drive and to protect
l _{Fast intrinsic diode}
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 22 A
Characteristic Values
Min. Typ. Max.
500
V
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
2.5
5.0 V
±100 nA
T_J = 125° C
25 µA
500 µA
150 mΩ
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DS99319E(03/06)