IXFR40N50Q2 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
IXFR40N50Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g
Low R_g, High dv/dt, Low t_rr
Preliminary Data Sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
TT_CC
=
=
25°C,
25°C
pulse
width
limited
by
T_JM
TT_CC
= 25°C
= 25°C
TI^SJ
≤
≤
I1_{D5M0, °}dCi/d, tR≤_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS,
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting force
Maximum Ratings
500
V
500
V
±30
V
±40
V
29
A
160
A
40
A
50
mJ
2.5
J
20
V/ns
320
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
22...130/5...30 N/lb.
5
g
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
500
V_DS = V_GS, I_D = 4 mA
2.5
V_GS = ±30 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = I_T
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
5.0 V
±200 nA
25 µA
1 mA
0.17 Ω
V_DSS = 500 V
I_D25
= 29 A
R_DS(on) = 0.17 Ω
t_rr ≤ 250 ns
ISOPLUS247 (IXFR)
E153432
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Isolated
Features
z _{Double metal process for low gate}
resistance
z _{International standard packages}
z _{Epoxy meet UL 94 V-0, flammability}
classification
z _{Low RDS , (on) low Qg}
z _{Avalanche energy and current rated}
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{Pulse generation}
z _{Laser drivers}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99075B(05/04)