IXFR38N80Q2_08 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q2-Class

HiPerFET^TM
Power MOSFET
Q2-Class
IXFR38N80Q2
(Electrically Isolated Back Surface)
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
800V
28A
240mΩ
250ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
28
A
150
A
38
A
4
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
20
500
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
2500
V~
Mounting force
20..120/4.5..27
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 19A, Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.5 V
± 200 nA
25 μA
2 mA
240 mΩ
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
• Double metal process for low gate
resistance
• Silicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy assembly
• Space savings
• High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99203A(05/08)