IXFR38N80Q2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Electrically Isolated Back Surface

HiPerFET^TM
MOSFET
Q2-Class
IXFR 38N80Q2
(Electrically Isolated Back Surface)
V_DSS = 800 V
I_D25
= 28 A
R_DS(on) = 240 mΩ
t_rr ≤ 250 ns
Preliminary Data Sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_C
Weight
Test Conditions
TT_JJ
= 25°C to 150°C
= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
TT_CC
= 25°C
= 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS, t = 1 min
I_SOL = 1mA, t = 1 s
Mounting Force
Maximum Ratings
800
V
800
V
±30
V
±40
V
28
A
150
A
38
A
75
mJ
4.0
J
20
V/ns
416
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
5
g
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3mA
800
V_DS = V_GS, I_D = 8 mA
2.0
V_GS = ±30 V_DC, V_DS = 0
VV_GDSS
=
=
0V^DV^SS
TT_JJ
=
=
25°C
125°C
VP_GuSlse=
10 V,
test, t
I_D
≤
=30I_T0
µs,
duty
cycle
d
≤
2
%
V
4.5 V
±200 nA
50 µA
2 mA
240 mΩ
ISOPLUS247 (IXFR)
G
D
G = Gate
S = Source
Isolated Back
Surface
D = Drain
Features
z _{Double metal process for low gate}
resistance
z _{Silicon chip on DCB substrate}
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Epoxy meet UL 94 V-0, flammability}
classification
z _{Avalanche energy and current rated}
z _{Fast intrinsic Rectifier}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99203(09/04)