IXFR36N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFR 36N60P}
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
600
20
200
200
V
A
mΩ
ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings _{ISOPLUS247 (IXFR)}
600
V
E153432
600
V
±30
V
±40
V
G
DS
Isolated Tab
20
A
80
A
G = Gate D = Drain
36
A
S = Source
50
mJ
1.5
J
20
208
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.6..27
5
V/ns
°C
°C
°C
°C
°C
°C
V~
N/lb
g
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{International standard package}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = I_T (note 1)
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
200 m Ω
© 2006 IXYS All rights reserved
DS99395E(03/06)