IXFR34N80 Datasheet, PDF (1/2 Pages) IXYS Corporation – Single MOSFET Die Avalanche Rated

HiPerFET^TM Power MOSFETs
ISOPLUS247^TM
(Electrically Isolated Backside)
Single MOSFET Die
Avalanche Rated
IXFR 34N80 V = 800 V
DSS
I_D25 = 28 A
R_DS(on) = 0.24 Ω
t_rr ≤ 250 ns
Preliminary Data Sheet
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I_D25
I
DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
T_C = 25°C, Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
800
V
800
V
±20
V
±30
V
28
A
600
A
150
A
60
mJ
3
J
5 V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 3mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 2, 3
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
150
V
2.0
4.0 V
±100 nA
T_J = 25°C
T_J = 125°C
100 µA
2 mA
0.24 Ω
ISOPLUS 247^TM
E153432
G
D
S
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<25pF)}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly}
l _{Space savings}
l _{High power density}
© 2000 IXYS All rights reserved
98674A (02/00)