IXFR32N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS247

PolarHV^TM HiPerFET
Power MOSFET
ISOPLUS247^TM
IXFR 32N80P
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
800 V
20 A
290 m Ω
250 ns
Symbol
V_DSS
V_DGR
V
GSS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
F_C
V_ISOL
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T
J
≤150° C,
R
G
=
4
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
50/60 Hz, RMS t = 1 minute
Maximum Ratings
800
V
800
V
±30
V
±40
V
20
A
70
A
16
A
50
mJ
1.5
J
10
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
20..120/4.5..26
N/lb
2500
V~
5
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
1000 µA
R_DS(on)
V_GS = 10 V, I_D = I_T
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
290 m Ω
ISOPLUS247 (IXFR)
E153432
(Isolated Tab)
G = Gate D = Drain
S = Source
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<30pF)}
l _{Low RDS (on) HDMOSTM process}
l _{Rugged polysilicon gate cell structure}
l _{Rated for Unclamped Inductive Load}
Switching (UIS)
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99419E(01/06)