IXFR32N50Q_04 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247

HiPerFET^TM Power MOSFETs
IXFR 32N50Q V_DSS
ISOPLUS247^TM
I_D25
R_DS(on)
(Electrically Isolated Back Surface)
t_rr
N-Channel Enhancement Mode
High dV/dt, Low t_rr, HDMOS^TM Family
= 500 V
= 30 A
= 0.16 Ω
= 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AS
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
TT_CC
=
=
25°C,
25°C
Pulse
width
limited
by
T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS t = 1 minute leads-to-tab
Maximum Ratings
500
V
500
V
±20
V
±30
V
30
A
120
A
30
A
1.5
J
45
mJ
5 V/ns
310
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
6
g
ISOPLUS 247^TM
E 153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<50pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 1, 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
2.5
4.5 V
±100 nA
T_J = 25°C
T_J = 125°C
100 µA
1 mA
0.16 Ω
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS98608D(01/04)