IXFR26N60Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS

HiPerFET^TM Power MOSFETs _{IXFR 26N60Q}
ISOPLUS247^TM Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalance Rated, High dV/dt
Low Gate Charge and Capacitances
V_DSS = 600 V
I_D25 = 23 A
R_DS(on) = 250 mW
t_rr £ 250 ns
Symbol
V
DSS
V_DGR
V
GS
V_GSM
I_D25
I
DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T
C
= 25°C, Note 1
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
600
V
600
V
±20
V
±30
V
23
A
92
A
26
A
45
mJ
1.5
J
5 V/ns
310
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
250
°C
2500
V~
5
g
ISOPLUS 247^TM
E153432
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Low drain to tab capacitance(<30pF)
• Low R HDMOS^TM process
DS (on)
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Test Conditions
V_GS = 0 V, I_D = 250mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V =V
DS
DSS
V =0V
GS
V_GS = 10 V, I_D = I_T
Notes 2, 3
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600
V
2.5
T=
J
25°C
T
J
= 125°C
4.5 V
±100 nA
25 mA
1 mA
250 mW
Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC & DC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98727 (06/09/00)
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