IXFR26N50Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

HiPerFET^TM Power MOSFETs
ISOPLUS247^TM
IXFR 26N50Q
IXFR 24N50Q
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t_rr, HDMOS^TM Family
V_DSS
I_D25
500 V 24 A
500 V 22 A
t_rr ≤ 250 ns
R_DS(on)
0.20 Ω
0.23 Ω
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
500
T_J = 25°C to 150°C; R_GS = 1 MΩ
500
Continuous
±20
Transient
±30
T_C = 25°C
26N50Q 24
24N50Q 22
T_C = 25°C, Pulse width limited by T_JM 26N50Q 104
24N50Q 96
T_C = 25°C
26N50Q 26
24N50Q 24
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
30
1.5
5
250
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
g
Test Conditions
V_GS = 0 V, I_D = 250uA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 1 & 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
2.5
4.5 V
±100 nA
T_J = 25°C
T_J = 125°C
26N50Q
24N50Q
25 µA
1 mA
0.20 Ω
0.23 Ω
ISOPLUS 247^TM
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<35pF)}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easyassembly:noscrews,orisolation}
foils required
l _{Space savings}
l _{High power density}
l _{Low collector capacitance to ground}
(low EMI)
© 2001 IXYS All rights reserved
98664A (5/01)