IXFR26N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR26N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
1200
V
1200
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
15
A
60
A
13
A
1.5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
15
320
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
2500
V~
Mounting force
20..120/4.5..27
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 13A, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
3.5
6.5 V
± 200 nA
50 μA
5 mA
500 mΩ
V_DSS = 1200V
I_D25 = 15A
≤ R_DS(on) 500mΩ
t_rr
≤ 300ns
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
•
•
Low R_DS
Rugged
(on) ^{HDMOSTM process}
polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Advantages
• Easy assembly
• Space savings
• High power density
Applications:
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power Applications}
z _{High Voltage Discharge circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
© 2008 IXYS CORPORATION, All rights reserved
DS99886A (3/08)